Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1992-07-10
1993-11-02
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257515, 257517, 257586, 257587, 257588, H01L 2900, H01L 2782, H01L 27102
Patent
active
052586421
ABSTRACT:
Semiconductor devices having a reduced parasitic capacitance while having a maximum acceptable current similar to those of prior devices, and a method of manufacturing thereof are disclosed. The inventive device has a hole at the bottom of which an insulating film separated from the hole walls is located, a semiconductor film being present in the hole, which is connected to the semiconductor substrate adjacent to the insulating film and a conductor film constituting a portion of the hole wall, and extends onto the insulating film so as to cover at least part of the film.
REFERENCES:
patent: 5144403 (1992-09-01), Chiung et al.
Fahmy Wael
Fujitsu Limited
Hille Rolf
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