Semiconductor device having reduced parasitic capacitance

Details Semiconductor device having reduced parasitic capacitance Semiconductor device having reduced parasitic capacitance

1992-07-10

1993-11-02

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257515, 257517, 257586, 257587, 257588, H01L 2900, H01L 2782, H01L 27102

Patent

active

052586421

ABSTRACT:
Semiconductor devices having a reduced parasitic capacitance while having a maximum acceptable current similar to those of prior devices, and a method of manufacturing thereof are disclosed. The inventive device has a hole at the bottom of which an insulating film separated from the hole walls is located, a semiconductor film being present in the hole, which is connected to the semiconductor substrate adjacent to the insulating film and a conductor film constituting a portion of the hole wall, and extends onto the insulating film so as to cover at least part of the film.

REFERENCES:
patent: 5144403 (1992-09-01), Chiung et al.

Affiliated with

Also associated with

Rating

Semiconductor device having reduced parasitic capacitance does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having reduced parasitic capacitance, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having reduced parasitic capacitance will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1759728