Semiconductor device having reduced parasitic capacitance

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

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Details

257515, 257517, 257586, 257587, 257588, H01L 2900, H01L 2782, H01L 27102

Patent

active

052586421

ABSTRACT:
Semiconductor devices having a reduced parasitic capacitance while having a maximum acceptable current similar to those of prior devices, and a method of manufacturing thereof are disclosed. The inventive device has a hole at the bottom of which an insulating film separated from the hole walls is located, a semiconductor film being present in the hole, which is connected to the semiconductor substrate adjacent to the insulating film and a conductor film constituting a portion of the hole wall, and extends onto the insulating film so as to cover at least part of the film.

REFERENCES:
patent: 5144403 (1992-09-01), Chiung et al.

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