Semiconductor device having reduced leakage current

Details Semiconductor device having reduced leakage current Semiconductor device having reduced leakage current

1977-09-30

1978-10-24

Wojciechowicz, Edward J.

357 52, 357 34, 357 53, 357 55, 357 56, H01L 2712

Patent

active

041224833

ABSTRACT:
A semiconductor mesa device having reduced leakage current comprises a moat substantially completely filled with a passivating material. A layer of conductive material overlies the passivating material and is spaced apart from the adjacent semiconductor material. Such a structure is particularly advantageous for use in low current devices.

REFERENCES:
patent: 3737701 (1973-06-01), Hoeberechts et al.
patent: 3979765 (1976-09-01), Brand
patent: 4048649 (1977-09-01), Bohn

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