Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Reexamination Certificate
2006-08-08
2006-08-08
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
C438S042000, C438S337000, C438S345000
Reexamination Certificate
active
07087925
ABSTRACT:
In one embodiment, a matrix of free-standing semiconductor shapes are oxidized to form a low capacitance isolation tub. The adjacent rows of shapes in the matrix are offset with respect to each to minimize air gap and void formation during tub formation. In a further embodiment, the spacing between adjacent rows is less than the spacing between shapes within a row.
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Abraham Fetsum
Jackson Kevin B.
Semiconductor Components Industries L.L.C.
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