Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2008-05-07
2011-11-15
Gurley, Lynne (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S737000, C257S780000, C257SE23019, C257SE23020, C257SE23021, C257SE23012, C257S678000, C257S690000, C257S700000, C438S108000, C438S612000, C438S613000, C438S614000
Reexamination Certificate
active
08058726
ABSTRACT:
A semiconductor device and method of manufacturing the same are provided. The semiconductor device comprises a semiconductor die including a bond pad, a redistribution layer, and a solder ball. The redistribution layer is formed by sequentially plating copper and nickel, sequentially plating nickel and copper, or sequentially plating copper, nickel, and copper. The redistribution layer includes a nickel layer in order to prevent a crack from occurring in a copper layer. Further, a projection is formed in an area of the redistribution layer or a dielectric layer to which the solder ball is welded and corresponds, so that an area of the redistribution layer to which the solder ball is welded increases, thereby increasing bonding power between the solder ball and the redistribution layer.
REFERENCES:
patent: 6455408 (2002-09-01), Hwang et al.
patent: 7183645 (2007-02-01), Kurosawa et al.
patent: 2003/0214038 (2003-11-01), Nemoto
patent: 2006/0038291 (2006-02-01), Chung et al.
patent: 2007/0252275 (2007-11-01), Huang et al.
patent: 2009/0166859 (2009-07-01), Yuan et al.
Cha Se Woong
Hwang Tae Kyung
Jin Jung Gi
Kim Seok Bong
Paek Jong Sik
Amkor Technology Inc.
Gunnison, McKay & Hodgson LLP
Gurley Lynne
Hodgson Serge J.
Kearney Naima
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