Semiconductor device having recessed gate regions and method of

Details Semiconductor device having recessed gate regions and method of Semiconductor device having recessed gate regions and method of

1997-10-22

1999-09-07

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making regenerative-type switching device

438455, 257170, H01L 21332

Patent

active

059500751

ABSTRACT:
In a surface of a silicon substrate of one conductivity type, there are formed a plurality of depressions or recesses, gate regions of opposite conductivity type are formed at bottoms of respective recesses, gate electrodes are provided on respective gate regions, and an electrically conductive block is joined to the surface of the semiconductor substrate. Between the surface of the semiconductor substrate and the electrically conductive block a contact region having a high impurity concentration and/or an electrically conductive material layer may be provided in order to improve electrical and mechanical properties of the contact between the semiconductor substrate and the electrically conductive block. The gate region can have a high impurity concentration and a distance between a channel region and the electrically conductive block can be very small.

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