Semiconductor device having punch-through protected buried conta

Details Semiconductor device having punch-through protected buried conta Semiconductor device having punch-through protected buried conta

1990-11-26

1993-05-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG19, 148DIG20, 437 63, 437 75, 437186, 437187, H01L 2176

Patent

active

052081680

ABSTRACT:
Adjacent buried contacts (11, 12, 13) formed at the principal surface of a well or substrate region (14) of a semiconductor device, each having a doped contact region (29, 30 31) of one conductivity type and a punch-through prevention region (36, 37, 38) of the opposite conductivity type surrounding the lower portion of the doped contact region are provided. The punch-through prevention region may advantageously be of the same conductivity type as the substrate. By performing an extra implant or other impurity introduction step while the mask to etch the contacts through the dielectric layer remains in place, the procedure to provide punch-through protected buried contacts may be easily integrated into current processes without the need for an extra mask. Such a structure and procedure enables buried contacts to be spaced closely together without over-doping the well region (14) in which source-drain regions (40, 42, 44, 46) are also formed thus avoiding a degradation in device performance.

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