Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1991-05-23
1993-11-09
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257635, H01L 2328
Patent
active
052606007
ABSTRACT:
A semiconductor device having a protective insulating film is disclosed. This semiconductor device includes a semiconductor substrate, and an interconnection pattern provided on said semiconductor substrate and electrically connected with said elements. A silicon-oxy-nitride film is provided on said semiconductor substrate so as to cover said interconnection pattern. The silicon-oxy-nitride film is deposited in accordance with a chemical vapor deposition Method using plasma, using a mixture gas including organic silane and a nitriding gas and has therefore superior step coverage. The silicon-oxy-nitride film has a superior barrier characteristic to moisture coming in from the outside. A semiconductor device superior in reliability such as moisture resistance is thus obtained.
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Hille Rolf
Mitsubishi Denki & Kabushiki Kaisha
Potter Roy
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