Semiconductor device having protection circuit

Details Semiconductor device having protection circuit Semiconductor device having protection circuit

1990-02-20

1991-03-19

Hille, Rolf

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 238, 3072021, H01L 2978

Patent

active

050015290

ABSTRACT:
A semiconductor device is provided with a first protection path between a first terminal and an input terminal, a second protection path between a second power source terminal and the input terminal, and a third protection path between the first and the second power source terminals. Each protection path includes a first and a second P-N junction formed to be reverse biased, and is made conductive when the voltage between the corresponding two terminals exceeds a predetermined voltage so as to protect an internal circuit connected to the input terminal from an electrostatic breakdown.

REFERENCES:
patent: 4131908 (1978-12-01), Daub et al.
patent: 4750078 (1988-06-01), Ganger et al.
patent: 4924339 (1990-05-01), Atsumi et al.
patent: 4949212 (1990-08-01), Lenz et al.

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