Semiconductor device having projection on lower electrode...

Details Semiconductor device having projection on lower electrode... Semiconductor device having projection on lower electrode...

2011-03-01

2011-03-01

Roman, Angel (Department: 2812)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S393000, C438S396000, C438S399000, C257SE21090

Reexamination Certificate

active

07897475

ABSTRACT:
A method of forming a semiconductor device, includes forming a lower electrode including a metal and a nitrogen on a semiconductor substrate, irradiating a reducing gas to a surface of the lower electrode, and irradiating a gas containing silicon to the surface of the lower electrode to form a projection containing silicide by reacting the metal with the silicon in an island shape on the surface of the lower electrode. Then, a capacitor film is formed on the lower electrode and the projection, and an upper electrode is formed on the capacitor film.

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