Semiconductor device having porous anodized aluminum isolation b

Details Semiconductor device having porous anodized aluminum isolation b Semiconductor device having porous anodized aluminum isolation b

1976-06-23

1978-03-28

James, Andrew J.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

357 49, 357 50, 357 54, 357 73, 204 15, 29590, H01L 2702, H01L 2712, H01L 2704

Patent

active

040818233

ABSTRACT:
An integrated circuit having dielectric isolation is fabricated by growing a double epitaxial layer of N-type semiconductive material onto a P-type substrate. A dielectric layer is formed over the epitaxial layer and thereafter the dielectric and the epitaxial growth are removed in selected isolation regions to expose the substrate. A metal layer is evaporated onto the device so that metal is deposited both on the exposed substrate material and on the dielectric layer. A dielectric is formed by selectively anodizing the metal deposited on the exposed substrate to provide electrical isolation between the remaining portions of the epitaxial growth. Because of the electrical insulating characteristics of the dielectric layer, the metal deposited on the dielectric layer is not anodized and may be removed using a compound that attacks the unanodized metal and has little effect on the anodized metal. Base and emitter elements are formed in the conventional manner to complete the integrated circuit.

REFERENCES:
patent: 2754456 (1956-07-01), Madelung
patent: 3386865 (1968-06-01), Doo
patent: 3564358 (1971-02-01), Hahnlein
patent: 3564358 (1971-02-01), Hahnlein
patent: 3634203 (1972-01-01), McHahon
patent: 3723258 (1973-03-01), Podell et al.
patent: 3988214 (1976-10-01), Tsunemitsu
patent: 4021592 (1977-05-01), Fromson

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