Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Patent
1993-02-23
1999-09-07
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
257 74, 257 77, 257 66, H01L 2976, H01L 2904, H01L 31036, H01L 310312
Patent
active
059490918
ABSTRACT:
In the crystal structure of a polysilicon thin film having a field effect mobility .mu..sub.FE of about 80 cm.sup.2 /V.multidot.sec, a grain size is about 200 nm and a crystallite size on the (111) plane is about 180 nm. The crystal size corresponds to the size of a completely monocrystallized portion of a grain. The condition of obtaining a field effect mobility .mu..sub.FE of about 80 cm.sup.2 /V.multidot.sec is that the crystallite size on the (111) plane is at least 180 nm (measured value). By taking the crystallite size into consideration, it becomes possible to achieve a high field effect mobility .mu..sub.FE which cannot be obtained merely by increasing the grain size.
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Casio Computer Co. Ltd.
Clark Jhihan B.
Saadat Mahshid
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