Semiconductor device having polysilicon resistors with a specifi

Details Semiconductor device having polysilicon resistors with a specifi Semiconductor device having polysilicon resistors with a specifi

1994-09-30

1996-03-19

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257536, 257904, 257380, H01L 2900

Patent

active

055005535

ABSTRACT:
A semiconductor device is disclosed that can effectively prevent a change in the resistance ratio of polysilicon resistor films when a plasma nitride film is formed above a plurality of polysilicon resistor films. The semiconductor device has metal interconnection layers 5a and 5b formed above polysilicon resistor films 3a and 3b, respectively. The ratio of the overlapping area of the polysilicon resistor film 3a and the metal interconnection layer 5a is set to be substantially equal to that of the polysilicon resistor film 3b and the metal interconnection layer 5b.

REFERENCES:
patent: 4426658 (1984-01-01), Gontowski, Jr.
patent: 4484212 (1984-11-01), Komatsu et al.
patent: 4516313 (1985-05-01), Turi et al.
patent: 4631705 (1986-12-01), Honda
"Annealing effect on the resistivity of polycrystalline silicon films passivated with plasma-deposited silicon-nitride films" by Yoji Saito et al., J. Appl. Phys., vol. 63, No. 4, Feb. 15, 1988, pp. 1117-1120.
"The hydrogen content of plasma-deposited silicon nitride" by W. A. Lanford, J. Appl. Phys., vol. 49, No. 4, Apr. 1978, pp. 2473-2477.

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