Semiconductor device having polycrystalline silicon resistor

Details Semiconductor device having polycrystalline silicon resistor Semiconductor device having polycrystalline silicon resistor

1988-11-23

1990-10-02

Carroll, J.

357 51, 357 54, 357 67, 357 71, H01L 2702, H01L 2934, H01L 2904, H01L 2348

Patent

active

049611038

ABSTRACT:
A semiconductor device having a silicon resistor element is disclosed. The silicon resistor element includes a first polycrystalline silicon film containing oxygen atoms with a low density, and a second polycrystalline silicon film disposed on the first polycrystalline silicon film and containing oxygen atoms with a high density. A silicon oxide film converted from polycrystalline silicon is attached to the top surface of the second polycrystalline silicon film.

REFERENCES:
patent: 4001762 (1977-01-01), Aoki et al.
patent: 4406051 (1983-09-01), Iizuka
patent: 4451328 (1984-05-01), Dubois
patent: 4590508 (1986-05-01), Hirakawa et al.
patent: 4702937 (1987-10-01), Yamoto et al.
T. Ohzone, M. Fukumoto, G. Fuse, A. Shinohara, S. Odanaka, and M. Sasago, "Ion-Implanted Thin Polycrystalline-Silicone High-Value Resistors for High-Density Poly-Load Static RAM Applications", (IEEE Transactions on Electron Devices, vol. ED-32, No. 9, Sep. 1985).
M. K. Lee, C. Y. Lu, K. Z. Chang and C. Shih, "On the Semi-Insulating Polycrystalline Silicon Resistor", (Solid State Electronics, vol. 27, No. 11, pp. 995-1001, 1984).

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