Semiconductor device having parallel path for current flow

Details Semiconductor device having parallel path for current flow Semiconductor device having parallel path for current flow

1975-02-26

1976-12-21

Wojciechowicz, Edward J.

357 65, 357 55, 357 86, H01L 2348, H01L 2906

Patent

active

039992179

ABSTRACT:
To lower the resistance to current flow from, e.g., the base region to the base terminal lead, a channel of a conductivity type opposite to that of the base region, and of higher conductance, is disposed within the base region underlying the metal layer contact on the surface of the device. The metal layer contacts both the base region and the channel to electrically short the PN junction therebetween.

REFERENCES:
patent: 3617828 (1971-11-01), Daniluk
patent: 3676229 (1972-07-01), Einthoven et al.
patent: 3735358 (1973-05-01), Ho
patent: 3858233 (1974-12-01), Miyata et al.

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