Semiconductor device having parallel connection of an insulated

Details Semiconductor device having parallel connection of an insulated Semiconductor device having parallel connection of an insulated

1995-02-21

1997-12-23

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257146, 257104, 257378, 363 56, H01L 2974, H01L 31111, H01L 2976, H02H 7122

Patent

active

057010188

ABSTRACT:
The present invention provides a semiconductor device comprising, at least a pair of an insulated gate bipolar transistor, and a diode, both of which are in a reverse parallel connection with each other, wherein the resistivity of the base layer of the lowest impurity concentration in the diode is lower than that of the base layer of the lowest impurity concentration in the insulated gate bipolar transistor, and wherein a breakdown voltage of said insulated gate bipolar transistor at the time of switching from conduction state to blocking state is lower than a breakdown voltage of said insulated gate bipolar transistor and said diode at the time of blocking state.

REFERENCES:
patent: 5274541 (1993-12-01), Kimura et al.

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