Semiconductor device having p-n column portion

Details Semiconductor device having p-n column portion Semiconductor device having p-n column portion

2008-07-10

2010-11-23

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S773000, C257SE23010

Reexamination Certificate

active

07838995

ABSTRACT:
A semiconductor device includes: a first semiconductor layer; a p-n column portion over the first semiconductor layer and including second and third semiconductor layers, which are alternately arranged; and a peripheral portion adjacently to the p-n column portion and including a fourth semiconductor layer. An end second semiconductor layer has an impurity amount equal to or larger than a half of other second semiconductor layers. The third semiconductor layers include a large impurity amount portion adjacent to the end second semiconductor layer. The large impurity amount portion includes at least one third semiconductor layer having an impurity amount larger than an impurity amount of other third semiconductor layers.

REFERENCES:
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patent: 7417284 (2008-08-01), Yamauchi et al.
patent: 7541643 (2009-06-01), Ono et al.
patent: 7553731 (2009-06-01), Yamauchi et al.
patent: 2006/0043480 (2006-03-01), Tsuchitani et al.
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patent: 2006/0231917 (2006-10-01), Ono et al.
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patent: A-2003-007676 (2003-01-01), None
Office Action issued from the Japanese Patent Office on Aug. 18, 2009 in the corresponding Japanese patent application No. 2007-184736 (and English translation).

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