Semiconductor device having oxygen doped polycrystalline passiva

Details Semiconductor device having oxygen doped polycrystalline passiva Semiconductor device having oxygen doped polycrystalline passiva

1977-12-05

1979-11-27

Clawson, Jr., Joseph E.

357 23, 357 42, 357 53, 357 54, 357 59, 357 86, H01L 2934

Patent

active

041763726

ABSTRACT:
A polycrystalline layer is formed as a passivation layer on a monocrystalline semiconductor substrate, the polycrystalline layer containing oxygen in the range between 2 to 45 atomic percent. The density of surface states between the surface of said substrate and the polycrystalline silicon layer is less than 10.sup.10 /cm.sup.2 .multidot.eV at the middle portion of a forbidden band, and the interface density of fixed charge in the polycrystalline layer is less than 10.sup.10 /cm.sup.2.

REFERENCES:
patent: B535209 (1976-03-01), Kajiwara et al.
patent: 3731161 (1973-05-01), Yamamoto
patent: 3878549 (1975-04-01), Yamazaki et al.
patent: 3925107 (1975-12-01), Goula et al.
patent: 3934399 (1976-01-01), Nishimura et al.
patent: 3971061 (1976-07-01), Matsushita et al.
patent: 3977019 (1976-08-01), Matsushita et al.
P. Richman, "MOS Field-Effect Transistors and Integrated Circuits," .COPYRGT.1973, Wiley-Interscience, TK 7871, 85, R466, pp. 17-33, 137-141.

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