Semiconductor device having overload protection

Details Semiconductor device having overload protection Semiconductor device having overload protection

1984-08-10

1987-01-06

Carroll, J.

357 2313, 357 51, 357 65, 357 68, 357 71, 357 81, H01L 2348, H01L 2702, H01L 2946, H01L 2962

Patent

active

046350918

ABSTRACT:
The transistor includes a semiconductor body having a surface on which are disposed metallic connection contact areas, including means for protection from overloads. At least one of the metallic area comprises a material, such as Al, susceptible to forming a eutectic with the substrate, which is made, for example, of Si. The metallic area is formed from an alloy of the material, such as the Al-Si eutectic, having a melting point whose temperature is lower than the formation temperature of the Al-Si eutectic and higher than the temperature of soldering the semiconductor body on a support.

REFERENCES:
patent: 3925808 (1975-12-01), Rai-Choudhury
patent: 3987480 (1976-10-01), Diguet et al.
patent: 4151545 (1979-04-01), Schnepf et al.
patent: 4392010 (1983-07-01), Lindmayer

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