Semiconductor device having overlapping conductor layers and met

Details Semiconductor device having overlapping conductor layers and met Semiconductor device having overlapping conductor layers and met

1993-07-13

1994-10-25

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 41, 437 44, H01L 21283

Patent

active

053589009

ABSTRACT:
A semiconductor device includes a semiconductor substrate, an active layer formed on the semiconductor substrate, source and drain electrodes respectively formed on the active layer, a gate electrode formed on the active layer between the source and drain electrodes and including a gate contact portion which makes contact with the active layer and has a thickness greater than those of the source and drain electrodes and an overgate portion which is connected to the gate contact portion and extends over at least a portion of one of the source and drain electrodes, a first insulator layer formed on the active layer and covering the source and drain electrodes and the gate contact portion, a first contact hole in the first insulator layer through which the overgate portion connects to the one of the source and drain electrodes, a second insulator layer formed on the first insulator layer and covering the overgate portion, a second contact hole in the second insulator layer at a position above the overgate portion, and an interconnection layer formed on the second insulator layer and connected to the overgate portion via the second contact hole.

REFERENCES:
patent: 4839309 (1989-06-01), Morikawa
patent: 5100817 (1992-03-01), Cederbaum et al.
patent: 5112765 (1992-05-01), Cederbaum et al.
patent: 5119160 (1992-06-01), Hall
patent: 5252843 (1993-11-01), Suzuki
patent: 5275959 (1994-01-01), Kobayashi et al.
patent: 5286664 (1994-02-01), Horiuchi

Affiliated with

Also associated with

Rating

Semiconductor device having overlapping conductor layers and met does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having overlapping conductor layers and met, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having overlapping conductor layers and met will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-135159