Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1991-12-16
1993-10-12
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257280, 257282, 257283, H01L 2980, H01L 31112
Patent
active
052528430
ABSTRACT:
A semiconductor device includes a semiconductor substrate, an active layer formed on the semiconductor substrate, source and drain electrodes respectively formed on the active layer, a gate electrode formed on the active layer between the source and drain electrodes and including a gate contact portion which makes contact with the active layer and has a thickness greater than those of the source and drain electrodes and an overgate portion which is connected to the gate contact portion and extends over at least a portion of one of the source and drain electrodes, a first insulator layer formed on the active layer and covering the source and drain electrodes and the gate contact portion, a first contact hole in the first insulator layer through which the overgate portion connects to the one of the source and drain electrodes, a second insulator layer formed on the first insulator layer and covering the overgate portion, a second contact hole in the second insulator layer at a position above the overgate portion, and an interconnection layer formed on the second insulator layer and connected to the overgate portion via the second contact hole.
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IBM Technical Disclosure Bulletin, vol. 22 No. 7, Dec. 1979, "Self-Aligned Silicon MESFET or JFET" by Ning et al, pp. 2918-2921.
"A New Refractory Self-Aligned Gate Technology For GaAs Microwave Power FET's and MMIC's", Geissberger et al, 8093 IEEE Transactions on Electron Devices, vol. 35, No. 5, May 1988, New York, pp. 615-622.
Fujitsu Limited
Hille Rolf
Loke Steven
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