Patent
1990-03-06
1992-06-23
Jackson, Jr., Jerome
357 30, 357 71, H01L 2348, H01L 2944, H01L 2952, H01L 2960
Patent
active
051247810
ABSTRACT:
A semiconductor device which includes a semiconductor substrate, an element region formed on one of the principal surfaces of the semiconductor substrate with multilayer wiring structure having an organic film as an interlayer insulating film, a plurality of electrically conductive pillars formed in the periphery of the element region on the principal surface of the substrate, an organic interlayer insulating film formed between the plurality of electrically conductive pillars, and bonding pads formed on the plurality of electrically conductive pillars and extending from the upper layer wiring of the element region.
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Harding et al., `Universal Monolithic Circuit . . . `, IBM Tech Discl., vol. 8 #5, Oct. 1965 pp. 804-805.
Cortellino et al., `Dielectric Sputtering for Multilayer Circuitry`, IBM Tech Discl., vol 14 #2, Jul. 71, p. 429.
David et al., `Producing Integral via and Pad Metallurgy`, IBM Tech. Discl., vol. 14 #1, Jun. 71, p. 101.
Jackson, Jr. Jerome
Meier Stephen D.
NEC Corporation
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