Semiconductor device having ohmic electrode and method of manufa

Details Semiconductor device having ohmic electrode and method of manufa Semiconductor device having ohmic electrode and method of manufa

1997-01-27

1999-06-29

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257743, 257 94, H01L 2348, H01L 2352, H01L 2940

Patent

active

059172436

ABSTRACT:
A semiconductor device having an ohmic electrode having a satisfactory ohmic contact to an n-type GaAs can be obtained by heat treatment at low temperature. A method of manufacturing the semiconductor device having the ohmic electrode includes two processes. In the first process, a metal layer containing Ni, Sn and AuGe is formed on one main surface of the n-type GaAs. In the second process, the n-type GaAs is subjected to a heat treatment at a temperature which is equal to or higher than 190.degree. C. and equal to or lower than 300.degree. C. Thus, the ohmic electrode is formed on the one main surface of the n-type GaAs.

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"Low Temperature Annealed Contacts to Very Thin GaAs Epilayers", American Institute of Physics, 1986, Patrick, et al. pp. 986-988.

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