Semiconductor device having non parallel cleavage planes in...

Details Semiconductor device having non parallel cleavage planes in... Semiconductor device having non parallel cleavage planes in...

2011-06-21

2011-06-21

Chambliss, Alonzo (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For plural devices

C257S783000, C438S107000, C438S455000, C438S462000

Reexamination Certificate

active

07964960

ABSTRACT:
The invention prevents a fracture parallel to a cleavage plane of a supporting substrate along a groove formed in the supporting substrate before dicing. A supporting substrate is attached to a front surface of a semiconductor substrate formed with an electronic device with an adhesive layer being interposed therebetween. In this supporting substrate, dicing lines are not parallel with cleavage planes which are perpendicular to the front surface of supporting substrate, i.e., a fifth cleavage plane and a sixth cleavage plane crossing perpendicularly thereto. A groove is then formed in the supporting substrate from the front surface to the middle thereof in the direction perpendicular to the front surface, along the dicing lines inside an opening provided in the semiconductor substrate. This groove is not parallel with the fifth cleavage plane and the sixth cleavage plane. After given processes, dicing is performed to the layered body of layers from the semiconductor substrate to the supporting substrate along the dicing lines.

REFERENCES:
patent: 7759779 (2010-07-01), Okada et al.
patent: 2004/0137723 (2004-07-01), Noma et al.
patent: 2005/0048740 (2005-03-01), Noma et al.
patent: 2008/0258258 (2008-10-01), Horikoshi et al.
patent: 2009/0050996 (2009-02-01), Liu et al.
patent: 2008-130768 (2008-06-01), None

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