Semiconductor device having multiple wiring layers

Details Semiconductor device having multiple wiring layers Semiconductor device having multiple wiring layers

2006-05-02

2009-11-24

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

C257S208000, C257S773000

Reexamination Certificate

active

07622757

ABSTRACT:
A semiconductor device comprises a plurality of semiconductor elements; and a first wire and a second wire provided to connect the semiconductor elements in parallel. The first wire and the second wire include respective wires formed in multiple wiring layers. Each wiring layer includes the first wire and the second wire formed alternately and in parallel. The wires are formed as to intersect each other in adjacent wiring layers. The first wires are connected with each other through a via-connection at an intersection of the first wires and the second wires are connected with each other through a via-connection at an intersection of the second wires.

REFERENCES:
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patent: 6445071 (2002-09-01), Haruhana et al.
patent: 2002/0149962 (2002-10-01), Horiguchi
patent: 05-152525 (1993-06-01), None
patent: 07-142729 (1995-06-01), None
patent: 8-46049 (1996-02-01), None
patent: 08-125176 (1996-05-01), None
patent: 2003-151982 (2003-05-01), None

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