Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2008-08-26
2010-11-16
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S454000, C257S409000, C257S488000, C257S659000, C257SE21572
Reexamination Certificate
active
07833876
ABSTRACT:
In a manufacturing of a semiconductor device, at least one of elements is formed in each of element formation regions of a substrate having a main side and a rear side, and the substrate is thinned by polished from a rear side of the substrate, and then, multiple trenches are formed on the rear side of the substrate, so that each trench reaches the main side of the substrate. After that, an insulating material is deposited over an inner surface of each trench to form an insulating layer in the trench, so that the element formation regions are isolated. Thereby, generation of cracks and structural steps in the substrate and separation of element formation regions from the substrate can be suppressed.
REFERENCES:
patent: 4612408 (1986-09-01), Moddel et al.
patent: 5122856 (1992-06-01), Komiya
patent: 5354695 (1994-10-01), Leedy
patent: 5442223 (1995-08-01), Fujii
patent: 5841197 (1998-11-01), Adamic, Jr.
patent: 5869354 (1999-02-01), Leedy
patent: 6084284 (2000-07-01), Adamic, Jr.
patent: 6369426 (2002-04-01), Blanchard et al.
patent: 6423573 (2002-07-01), Gidon
patent: 6524890 (2003-02-01), Ueda et al.
patent: 6597053 (2003-07-01), Anthofer et al.
patent: 6878605 (2005-04-01), Kim et al.
patent: 6879029 (2005-04-01), Ueda et al.
patent: 7427803 (2008-09-01), Chao et al.
patent: 7531407 (2009-05-01), Clevenger et al.
patent: 7537982 (2009-05-01), Lien et al.
patent: 2006/0001147 (2006-01-01), Tomita et al.
patent: 2006/0172494 (2006-08-01), Kohlmann-Von Platen et al.
patent: 2006/0220178 (2006-10-01), Kubo et al.
patent: 2007/0029636 (2007-02-01), Kanemaru et al.
patent: 2007/0264753 (2007-11-01), Tomita et al.
patent: 2008/0135932 (2008-06-01), Ozeki et al.
patent: 2008/0224174 (2008-09-01), Sasaki et al.
patent: 2008/0237808 (2008-10-01), Kubo et al.
patent: 2008/0290524 (2008-11-01), Lanzerotti et al.
patent: 2010/0078776 (2010-04-01), Barth et al.
patent: 2010/0176480 (2010-07-01), Senda et al.
patent: 19800715 (1999-07-01), None
patent: 19806819 (1999-08-01), None
patent: A-62-130537 (1987-06-01), None
patent: A-05-067676 (1993-03-01), None
patent: A-7-161809 (1995-06-01), None
patent: A-10-027767 (1998-01-01), None
patent: A-2007-035729 (2007-02-01), None
Office Action mailed Jan. 6, 2010 from the Japan Patent Office for corresponding patent application No. 2008-106014 (English translation enclosed).
Search Report mailed Sep. 3, 2010 in corresponding European patent application No. 08014382.9 (Engligh translation enclosed).
Akagi Nozomu
Fujii Tetsuo
Kitamura Yasuhiro
DENSO CORPORATION
Munoz Andres
Pham Thanh V
Posz Law Group , PLC
LandOfFree
Semiconductor device having multiple element formation... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having multiple element formation..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having multiple element formation... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4230311