Semiconductor device having multilayered electrode structure

Details Semiconductor device having multilayered electrode structure Semiconductor device having multilayered electrode structure

1975-06-23

1977-02-15

Lynch, Michael J.

357 59, 357 71, H01L 2972

Patent

active

040084841

ABSTRACT:
A semiconductor device wherein two conductive layers, insulated from one another, are laminated on one surface of a semiconductor wafer is described. The two conductive layers are in ohmic contact with two regions of the opposite conduction type to one another and provided on the surface of the semiconductor wafer. Each of the conductive layers either forms the electrode of this semiconductor device or forms an intermediate part connecting one region on the semiconductor wafer with the electrode. By such an electrode configuration, high output power can be obtained in high-frequency band.

REFERENCES:
patent: 3444443 (1969-05-01), Moroshima
patent: 3460007 (1969-08-01), Scott
patent: 3461357 (1969-08-01), Mutter et al.
patent: 3504239 (1970-03-01), Johnson et al.

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