Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2007-04-24
2007-04-24
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257SE21303, C257SE21583, C257SE21309, C257S701000, C257S758000, C257S751000, C257S774000, C257S775000, C257S760000, C257S776000, C257S762000, C257S276000, C257S410000, C257S254000
Reexamination Certificate
active
10755003
ABSTRACT:
A method for manufacturing a semiconductor device includes a step of forming a first groove in a first insulating film, forming a conductive film in the first groove, a step of selectively forming a second insulating film on the conductive film and the first insulating film, a step of forming a second groove by removing part of the conductive film using the second insulating film as a mask, the second groove being formed so as to form a connecting portion of the conductive film under the second insulating film and form a first wiring layer by forming the connecting portion with a bottom of the first groove integrally with each other as one unit.
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Frommer & Lawrence & Haug LLP
Kabushiki Kaisha Toshiba
Williams Alexander Oscar
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