Semiconductor device having multilayer silicide contact system a

Details Semiconductor device having multilayer silicide contact system a Semiconductor device having multilayer silicide contact system a

1986-03-14

1989-01-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437162, 437192, 437200, 148DIG124, 148DIG147, H01L 21283, H01L 21225

Patent

active

048001775

ABSTRACT:
A process for making a semiconductor device including a semiconductor layer heavily doped to a predetermined dopant concentration and a multilayer contact system in contact with a surface portion of the heavily doped semiconductor layer, the multilayer contact system comprising a metal silicide layer of the silicide of a refractory metal, the metal silicide layer directly contacting the surface portion of the heavily doped semiconductor layer and being lower in dopant concentration than the predetermined dopant concentration of the semiconductor layer, a barrier layer of at least one metal on the metal silicide layer, and an electrode layer including a highly conductive metal on the barrier layer.

REFERENCES:
patent: 3753774 (1973-08-01), Veloric
patent: 3900944 (1975-08-01), Fuller et al.
patent: 4141022 (1979-02-01), Sigg et al.
patent: 4436582 (1984-03-01), Saxena

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