Semiconductor device having multilayer metal interconnection

Details Semiconductor device having multilayer metal interconnection Semiconductor device having multilayer metal interconnection

1992-09-10

1994-03-08

Picard, Leo P.

Electricity: conductors and insulators

Conduits, cables or conductors

Preformed panel circuit arrangement

174256, 174258, 174261, 257794, 257586, H05K 100

Patent

active

052935035

ABSTRACT:
In a semiconductor device in which the surface of a semiconductor substrate which was subjected to impurity diffusion process, and includes a multilayer metal interconnection layer which is formed on top of it by alternately laminating a metal wiring layer and an interlayer insulating film, the present semiconductor device is characterized in that in a lower layer metal wiring layer there is provided a dummy wiring stripe which is arranged in parallel to two wiring stripes that are formed away from other wiring stripes at a space according to design rules. The width of the wiring stripe is augmented effectively due to the presence of the dummy stripe, and the holding quantity of the material of the coating film which constitutes a part of the interlayer insulating film is increased. Therefore, the flatness of the interlayer insulating film directly over these wiring stripes can be improved, and it becomes possible to secure the uniformity of the film of the upper layer metal wiring layer that is formed on top of the interlayer insulating film.

REFERENCES:
patent: 4949162 (1990-08-01), Tamaki et al.
patent: 5027188 (1991-06-01), Owada et al.
patent: 5103282 (1992-04-01), Isomura et al.
patent: 5177584 (1993-01-01), Uchida et al.

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