Semiconductor device having multilayer interconnection structure

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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257751, 257774, H01L 2348

Patent

active

052472043

ABSTRACT:
Interconnection layers are laid on top of one another with an interlayer insulating film therebetween and are electrically connected to each other by a connection portion formed by plating so as to achieve improvement in the initial characteristics and reliability of the multilayer interconnection structure.

REFERENCES:
patent: 4996584 (1991-02-01), Young et al.
patent: 5001541 (1991-03-01), Virkus et al.

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