Semiconductor device having multi-layered wiring, and method of

Details Semiconductor device having multi-layered wiring, and method of Semiconductor device having multi-layered wiring, and method of

1991-06-06

1993-02-02

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257757, 257755, H01L 2354

Patent

active

051842050

ABSTRACT:
A semiconductor device comprising a substrate, a first metal wiring layer made of aluminum alloy and formed on the substrate, a conductive film made of doped polysilicon and formed on a selected part of the first metal wiring layer, an inter-layer insulation film made of plasma SiO.sub.2 and formed on the conductive film and the first metal wiring layer, a contact hole formed in the inter-layer insulation film and being larger than the conductive film, and a second metal wiring layer made of aluminum alloy, extending through the contact hole, and connected to the conductive film.

REFERENCES:
patent: 3888971 (1975-05-01), Greer et al.
patent: 4507852 (1985-04-01), Karulkar
patent: 4937652 (1990-06-01), Okumura et al.
patent: 5081064 (1992-01-01), Inoue et al.

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