Semiconductor device having multi-layered wiring

Details Semiconductor device having multi-layered wiring Semiconductor device having multi-layered wiring

1989-10-11

1992-02-11

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437192, 437195, H01L 21223, H01L 21285

Patent

active

050875787

ABSTRACT:
A semiconductor device comprises a first electrode provided on a semiconductor substrate, and constituting a lower wiring layer, an insulating layer provided on the first electrode and the substrate, and a second electrode, which constitutes an upper wiring layer and is connected to the first electrode through a contact hole pierced through the insulating layer. The first electrode includes at least one of high melting point metal layer and high melting point metal silicide layer. The surface of the insulating layer is flattened by heat treatment.

REFERENCES:
patent: 3614547 (1971-10-01), May
patent: 3664874 (1972-05-01), Epstein
patent: 3675090 (1972-07-01), Neale
patent: 3935635 (1976-02-01), Botzenhardt
patent: 3946426 (1976-03-01), Sanders
patent: 3988823 (1976-11-01), Hu
patent: 4309224 (1982-01-01), Shibata
patent: 4348746 (1982-09-01), Okabayashi et al.
patent: 4349584 (1982-09-01), Flatley et al.
patent: 4363830 (1982-12-01), Hsu et al.
patent: 4467520 (1984-08-01), Shiotari
patent: 4502209 (1985-03-01), Eizenberg et al.
patent: 4502210 (1985-03-01), Okumura et al.
patent: 4571816 (1986-02-01), Dingwall
patent: 4582563 (1986-04-01), Hazuki et al.
patent: 4629635 (1986-12-01), Brors
patent: 4631564 (1986-12-01), Neilson et al.
patent: 4698659 (1987-10-01), Mizutari
patent: 4733289 (1988-03-01), Tsurumaru
patent: 4786962 (1988-11-01), Koch

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