Semiconductor device having multi-layer wiring structure with ad

Details Semiconductor device having multi-layer wiring structure with ad Semiconductor device having multi-layer wiring structure with ad

1976-08-03

1977-11-29

James, Andrew J.

357 65, 357 68, 357 69, 357 72, H01L 2348, H01L 2946, H01L 2954

Patent

active

040608280

ABSTRACT:
A semiconductor device has a through-hole cut in the insulating layer beneath the bonding pad of the wiring layer having a bonding pad onto which a metal wiring is to be connected and this wiring layer is connected through the through-hole with the lower wiring layer so that the connection between the wiring layer having a bonding pad and the lower wiring layer rarely corrodes or becomes disconnected.

REFERENCES:
patent: 3558992 (1971-01-01), Heuner et al.
patent: 3629669 (1971-12-01), Kauppila
patent: 3809625 (1974-05-01), Brown et al.
patent: 3890636 (1975-06-01), Harada et al.
patent: 3942187 (1976-03-01), Gelsing et al.

Affiliated with

Also associated with

Rating

Semiconductor device having multi-layer wiring structure with ad does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having multi-layer wiring structure with ad, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having multi-layer wiring structure with ad will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1635793