Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-03-01
2005-03-01
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S642000, C257S773000
Reexamination Certificate
active
06861670
ABSTRACT:
The object is to pattern extremely fine integrated circuits by forming fine contact holes. The dry etching method is employed to form contact holes to pattern a wiring (114), using a mask made of metallic film (112) and an organic material as an inter-layer insulating film (111) for covering switching elements and each of the wirings.
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Fujimoto Etsuko
Murakami Satoshi
Nakazawa Misako
Ohtani Hisashi
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Semiconductor Energy Laboratory Co,. Ltd.
Vu Hung
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