Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1992-02-25
1994-09-06
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257736, 257750, 257758, 257760, 257761, 257762, 257763, 257764, 257765, H01L 2348, H01L 2946, H01L 2954, H01L 2962
Patent
active
053451082
ABSTRACT:
A semiconductor device having an electrode wiring which prevents generation of hillock and has good stress migration capability is disclosed. A multi layer film including at least two Al-Si-Cu alloy films and at least two titanium nitride films formed by reactive sputtering laminated alternately with the Al-Si-Cu alloy films has a high mechanical strength against deformation and can effectively prevent generation of hillock. Ti-Al intermetallic compounds are formed in grain boundaries and in interfaces, which is effective to restrict generation of a void. Propagation of a void can be prevented by the intermediate titanium nitride film. Further, the formation of the Ti-Al compounds is restricted and an increase of resistance is negligible.
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Gniewek et al., "Titanium Overlay on Metallurgy", IBM Technical Disclosure Bulletin, vol. 13, No. 5, Oct 1970.
Ting et al., "The Use of Titanium-Based Contact Barrier layers in S Technology", Electronics and Optics, Thin Solid films, 96 pp. 327-345 Apr. 5-8 1982.
Olowalafe et al., "Interaction of Cu with CoSi.sub.2 with and without TiNx barrier layers", Appl. Phys. Lett., vol. 57 No. 13, Sep. 24, 1990.
Crane Sara W.
NEC Corporation
Wallace Valencia M.
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