Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With multiple separately connected emitter – collector – or...
Patent
1996-03-12
1998-06-30
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With multiple separately connected emitter, collector, or...
257564, 257577, H01L 2900, H01L 27082
Patent
active
057738734
ABSTRACT:
A semiconductor device having a differential amplifier circuit portion made of two multi-emitter bipolar transistors (BPT). Each multi-emitter BPT has the same number of a plurality of transistor elements each having an independent emitter electrode. Each transistor element of one multi-emitter BPT and a corresponding transistor element of the other multi-emitter BPT form a transistor element pair, with the emitter electrodes thereof being electrically connected. Each transistor element pair is electrically independent from other transistor element pairs, and the emitter electrodes of each transistor element pair are connected to an emitter current source independently from other emitter current sources.
REFERENCES:
patent: 4119994 (1978-10-01), Jain et al.
patent: 5438296 (1995-08-01), Kimura
patent: 5648741 (1997-07-01), Wichern
patent: 5661329 (1997-08-01), Hiramoto et al.
Shimura et al., "1W Ku-band A1GAs/GaAs Power HBTs with 72% Peak Power-Added Efficiency", IEEE MTT-S Digest, pp. 687-690 (1994).
Yamauchi et al., "10 Gb/s Monolithic Optical Modulator Driver with High Output Voltage of 5 V Using InGaP/GaAs HBTs", IEEE GaAs IC Symposium Digest, pp. 207-210, (1994).
Fahmy Wael
Kabushiki Kaisha Toshiba
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