Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-12-11
2007-12-11
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S312000, C257S537000, C257S350000
Reexamination Certificate
active
11048715
ABSTRACT:
A semiconductor device with having a MOS varactor and methods of fabricating the same are disclosed. The MOS varactor includes a metal gate electrode, an active semiconductor plate interposed between the metal gate electrode and the semiconductor substrate, and a capacitor dielectric layer interposed between the metal gate electrode and the active semiconductor plate. Further, a lower insulating layer insulates the MOS varactor from the semiconductor substrate. According to the present invention, a metal gate electrode is used to reduce poly depletion, thereby increasing a tuning range of the varactor, and to manufacture a reliable metal resistor without the need of an additional photomask.
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Kim Dae-Hyun
Oh Han-Su
Hu Shouxiang
Volentine & Whitt PLLC
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