Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2007-05-08
2007-05-08
Owens, Douglas W. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S707000, C257S719000
Reexamination Certificate
active
10972475
ABSTRACT:
A semiconductor device includes: a semiconductor chip; a first metal plate disposed on one side of the chip through a first solder layer; a second metal plate disposed on the other side of the chip through a second solder layer; a third metal plate disposed on the second metal plate through a third solder layer; supporting means for holding at least one of distances between the chip and the first metal plate and between the chip and the second metal plate; and excess solder accommodation means for accommodating excess solder in a case where the third solder layer includes the excess solder.
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First Office Action from Chinese Patent Office issued on Aug. 11, 2006 for the corresponding Chinese patent application No. 200410087755.6 (a copy and English translation theerof).
Nakase Yoshimi
Sakamoto Yoshitsugu
DENSO Corporation
Gebremariam Samuel A
Owens Douglas W.
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