Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2008-06-26
2011-12-13
Tran, Minhloan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S684000, C257S706000, C257S707000, C257S710000, C257S924000, C257SE23181, C257SE23193, C257SE23101
Reexamination Certificate
active
08076771
ABSTRACT:
In order to reduce a thermal stress applied by a metal cap to a semiconductor chip: a semiconductor chip (2) is bonded to a flat portion (11) of a metal cap (1); side wall portions of the metal cap (1) serve as external connection terminals (13); and a slit (7) is formed in the metal cap (1) so as to cross the semiconductor chip (2), so a bonding region between the semiconductor chip (2) and the metal cap (1) is divided into small bonding regions to reduce thermal stresses applied to the respective bonding regions. Therefore, peeling can be prevented in respective bonding regions, whereby a small-size semiconductor device in which the semiconductor chip is bonded to the metal cap with improved bonding reliability is obtained.
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Official Action dated Aug. 23, 2011 issued in corresponding Japanese Application No. 2007-167063 and English Translation.
Arroyo Teresa M
Renesas Electronics Corporation
Tran Minhloan T
Young & Thompson
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