Semiconductor device having metal alloy for electrodes

Details Semiconductor device having metal alloy for electrodes Semiconductor device having metal alloy for electrodes

1998-02-23

2000-01-04

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Bump leads

257741, 257768, H01L 2349

Patent

active

060113057

ABSTRACT:
In a metal alloy formed by first and second metal members for a semiconductor device, the first metal member is composed of approximately 0.1 to 10 wt. percent Cu with the residual amount being substantially composed of Al, and the second metal member is composed of approximately 0.5 to 5 wt. percent with the residual amount being substantially composed of Au.

REFERENCES:
patent: 4845543 (1989-07-01), Okikawa et al.
patent: 5172212 (1992-12-01), Baba
patent: 5455195 (1995-10-01), Ramsey et al.
patent: 5635763 (1997-06-01), Inoue et al.

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