Semiconductor device having memory element with stress...

Details Semiconductor device having memory element with stress... Semiconductor device having memory element with stress...

2011-04-26

2011-04-26

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257SE29313, C257SE21001, C438S003000

Reexamination Certificate

active

07932572

ABSTRACT:
Provided are a semiconductor device having an MTJ element capable of intentionally shifting the variation, at the time of manufacture, of a switching current of an MRAM memory element in one direction; and a manufacturing method of the device. The semiconductor device has a lower electrode having a horizontally-long rectangular planar shape; an MTJ element having a vertically-long oval planar shape formed on the right side of the lower electrode; and an MTJ's upper insulating film having a horizontally-long rectangular planar shape similar to that of the lower electrode and covering the MTJ element therewith. As the MTJ's upper insulating film, a compressive stress insulating film or a tensile stress insulating film for applying a compressive stress or a tensile stress to the MTJ element is employed.

REFERENCES:
patent: 6714444 (2004-03-01), Huai et al.
patent: 7215566 (2007-05-01), Kanegae
patent: 2005/0018365 (2005-01-01), Gill
patent: 2007/0108543 (2007-05-01), Furuta et al.
patent: 2005-535125 (2005-11-01), None
patent: 2006-156608 (2006-06-01), None
patent: 2007-158301 (2007-06-01), None

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