Semiconductor device having light receiving diode element with c

Details Semiconductor device having light receiving diode element with c Semiconductor device having light receiving diode element with c

1991-04-12

1992-04-21

Mintel, William

357 58, 357 56, 357 15, 357 16, 357 55, 357 51, 357 22, A01L 2714

Patent

active

051073188

ABSTRACT:
A semiconductor device includes a substrate, a first layer formed on the substrate and made of a semiconductor of a first conductive layer, a second layer formed on the first layer and functioning as a photoabsorption layer, a third layer formed on the second layer and made of a semiconductor of the first conductive type, a plurality of regions formed in the third layer and made of a semiconductor of a second conductive type opposite to the first conductive type thereby forming a plurality of pin diodes, where each of the regions at least reaches the second layer, and a plurality of electrodes respectively formed on the regions and made of the same electrode material. A first electrode of the plurality of electrodes receives a positive voltage to forward bias a first pin diode of the plurality of pin diodes and a second electrode of the plurality of electrodes receives a negative voltage to reverse bias a second pin diode of the plurality of pin diodes so that the second pin diode operates as a pin photodiode.

REFERENCES:
patent: 4634883 (1987-01-01), Nishiura et al.
patent: 4885622 (1989-12-01), Nomoto et al.
patent: 5004903 (1991-04-01), Kitamura et al.
Ota et al., "Twelve-Channel Individually Addressable InGaAs/InP p-I-n Photodiode and In GaAs/InP LED Arrays in a Compact Package", Journal of Lightwave Technology, vol. LT-5, No. 8, Aug. 1987, pp. 1118-1122.
Kaede et al., "12-Channel Parallel Optical-Fiber Transmission Using a Low-Drive Current 1.3 .mu.m LED Array and a p-i-n PD Array", Journal of Lightwave Technology, vol. 8, No. 6, Jun. 1990, pp. 883-888.

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