Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2006-06-27
2006-06-27
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S187000, C257S198000, C257S559000, C257S565000, C257S566000, C257S571000, C257S573000, C257S586000, C257S587000
Reexamination Certificate
active
07067857
ABSTRACT:
The gist of the present invention is as follows: In a monolithic microwave integrate circuit (MMIC) using a heterojunction bipolar transistor (HBT), via holes are respectively formed from the bottom of the MMIC for the emitter, base and collector. Of the via holes, one is located so as to face the HBT. The respective topside electrodes for the other via holes located so as not to face the HBT are provided in contact with the MMIC substrate.
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Mochizuki Kazuhiro
Ohbu Isao
Takubo Chisaki
Tanaka Ken'ichi
Tanoue Tomonori
Hitachi , Ltd.
Mattingly ,Stanger ,Malur & Brundidge, P.C.
Soward Ida M.
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