Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1994-03-17
1995-05-02
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257763, 257764, 257766, 257432, 257466, H01L 310224, H01L 310232, H01L 22482, H01L 2940
Patent
active
054122490
ABSTRACT:
An n.sup.- -type InP buffer layer is formed on an n-type InP substrate. An n.sup.- -type InGaAs light absorbing layer is formed on the n.sup.- -type InP buffer layer. An n.sup.- -type InP cap layer is formed on the n.sup.- -type InGaAs light absorbing layer. A p-type InP region is formed in the InP cap layer. A layered electrode having a contact with the p-type InP region comprises a first layer made of an Au layer, a second layer made of a Ti layer or the like, a third layer made of a Pt layer or the like, and a fourth layer made of an Au layer. The first layer made of Au has a thickness of 1 to 500 nm. This structure improves an ohmic ability and a peel strength at a contact portion where an electrode is connected, and simplifies manufacturing steps.
REFERENCES:
patent: 5047832 (1991-09-01), Tonai
patent: 5077599 (1991-12-01), Yano et al.
patent: 5260603 (1993-11-01), Kamura
Boos et al., The Addition of Ni in AuZn Gate Ohmic Contacts for lnP Field Effect Transistors, J. Vac. Sci. Technol. B, vol. 7, No. 3, May/Jun. 1989, pp. 502-504.
Hyugaji Masahiko
Ono Reiji
Brown Peter Toby
Hille Rolf
Kabushiki Kaisha Toshiba
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