Semiconductor device having layered chips

Details Semiconductor device having layered chips Semiconductor device having layered chips

2007-09-11

2007-09-11

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Multiple housings

C257S698000, C257S774000, C257S777000

Reexamination Certificate

active

11019618

ABSTRACT:
A semiconductor device includes an interface chip and a plurality of DRAM chips consecutively layered on the interface chip. A plurality of source electrodes, a plurality of ground electrodes, and a plurality of signal electrodes penetrate DRAM chips and interconnect the DRAM chips to the interface chip, which is connected to an external circuit. Each source electrode, a corresponding signal electrode and a corresponding ground electrode are arranged adjacent to one another in this order to reduce electromagnetic noise during operation of the DRAM chip.

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