Radiation imagery chemistry: process – composition – or product th – Post imaging processing – Physical developing
Patent
1985-12-26
1988-01-12
Edlow, Martin H.
Radiation imagery chemistry: process, composition, or product th
Post imaging processing
Physical developing
357 2, 357 61, 357 30, 357 4, 430 84, H01L 2904
Patent
active
047195010
ABSTRACT:
A semiconductor element is mainly composed of a polycrystalline Si thin film layer containing 0.01-3 atomic %, and further having a maximum surface unevenness of substantially not more than 800 .ANG. and/or a particular range of etching rate when etched with a predetermined etchant.
REFERENCES:
patent: 4425379 (1984-01-01), Vora et al.
patent: 4434318 (1984-02-01), Gibbons
patent: 4613382 (1986-09-01), Katayama et al.
patent: 4625224 (1986-11-01), Nakagawa et al.
Viktrovitch et al., "Diodes Schottky et MIS Tunnelsur Silicium Amorphe Hydrogene de Qualite Photovoltaique Prepare par Pulverisation Cathodique Caracterisation Electrique par Mesures Capacitives," Revue de Physique Appliquee, vol. 14, Jan. 1979, pp. 201-208.
Fan et al., "Proposed Design of a -SiiH Solar Cells Using Ultrathin Active Layer to Increase Conversion Efficiency," Fourteenth IEEE Photovoltaic Specialists Conference, 1980, San Diego, Calif., U.S.A., Jan. 7-10, 1980, pp. 1070-1073.
Campbell, "Enhanced Conductivity in Plasma-Hydrogenated Polysilicon Films," Appl. Phys Lett., 36(7), Apr. 1, 1980, pp. 604-606.
Kamins et al., "Hydrogenation of Transistors Fabricated in Polycrystalline-Silicon Films," IEEE Electron Device Letters, vol. EDL-1, No. 8, Aug. 1980, 159-161.
Hirai Yutaka
Komatsu Toshiyuki
Nakagawa Katsumi
Nakagiri Takashi
Omata Satoshi
Canon Kabushiki Kaisha
Edlow Martin H.
Mintel William A.
LandOfFree
Semiconductor device having junction formed from two different h does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having junction formed from two different h, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having junction formed from two different h will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-923064