Semiconductor device having junction field effect transistors

Details Semiconductor device having junction field effect transistors Semiconductor device having junction field effect transistors

1996-02-20

2000-02-01

Wojciechowicz, Edwards

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257224, 257286, 257287, 257270, H01L 2972

Patent

active

060206071

ABSTRACT:
An N.sup.- type epitaxial layer is formed on a P type semiconductor substrate, and a P.sup.+ type insulative isolating layer is so formed as to reach the semiconductor substrate from the surface of the N.sup.- type epitaxial layer to define a device forming region in the N.sup.- type epitaxial layer. An N.sup.+ type source diffusion layer and an N.sup.+ type drain diffusion layer are formed on the N.sup.- type epitaxial layer in the device forming region, apart from each other in one direction. A plurality of P.sup.+ type gate diffusion layers are formed between the N.sup.+ type source diffusion layer and N.sup.+ type drain diffusion layer, apart from one another in a direction perpendicular to the one direction. Channel regions for controlling the source-drain current are formed between the P.sup.+ type insulative isolating layer and the gate diffusion layer and between adjoining gate diffusion layers.

REFERENCES:
patent: 5057883 (1991-10-01), Noda
patent: 5359256 (1994-10-01), Gray
European Search Report, dated Aug. 5, 1997.
J. M.R. Danneels et al., "A New 4+4 Array of Active Bipolar Transistor Crosspoints", IEEE Journal of Solid-State Circuits, vol. SC-11, No. 6, pp. 779-783.

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