Semiconductor device having internal wire and method of fabricat

Details Semiconductor device having internal wire and method of fabricat Semiconductor device having internal wire and method of fabricat

1996-06-17

1998-11-17

Bowers, Jr., Charles L.

Pipes and tubular conduits

Repairing

H01L 214763

Patent

active

058376062

ABSTRACT:
In order to obtain a semiconductor device having an internal wire of low resistance, a conductive layer whose surface is silicified is provided in a surface of a semiconductor substrate. A conductor whose surface is silicified is provided on the semiconductor substrate in proximity to the conductive layer. This semiconductor device is provided with an internal wiring layer, which is formed by a titanium film and a titanium silicide layer for electrically connecting the surface of the conductive layer and a surface of an end of the conductor with each other, to cover a side wall surface and a bottom surface of a contact hole.

REFERENCES:
patent: 4782037 (1988-11-01), Tomozawa et al.
patent: 4884123 (1989-11-01), Dixit et al.

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