Semiconductor device having internal junction passsivating insul

Details Semiconductor device having internal junction passsivating insul Semiconductor device having internal junction passsivating insul

1965-12-14

1976-03-30

Edlow, Martin H.

357 58, 357 55, H01L 2712

Patent

active

039478696

ABSTRACT:
A semiconductor device composed of a semiconductor body having two zones which define a pn-junction between them, which device includes, for improving the high frequency characteristics of the device, a layer of insulating material disposed within the semiconductor body and separating the two zones from one another in the region surrounding the pn-junction.

REFERENCES:
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IBM Technical Disclosure Bulletin, H. N. Yu, Fabrication of Planar Arrays of Semiconductor Chips by Epitaxial Growth, Vol. 7, No. 11, Apr. 1965, p. 1104.

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