Semiconductor device having integrated diode

Details Semiconductor device having integrated diode Semiconductor device having integrated diode

1978-03-09

1980-09-30

Munson, Gene M.

357 20, 357 34, 357 38, 357 86, H01L 2990, H01L 2906, H01L 2972, H01L 2974

Patent

active

042258740

ABSTRACT:
A semiconductor transistor device comprises a base region having a relatively thin portion with a thicker portion peripherally surrounding the relatively thin portion. A PN junction is between the base region and a collector region and includes at least one radius of curvature having the lowest breakdown voltage of the PN junction. An emitter region is in the thicker portion of the base region and an emitter electrode overlies the relatively thin portion.

REFERENCES:
patent: 3226612 (1965-12-01), Haenichen
patent: 3239728 (1966-03-01), Aldrich et al.
patent: 3309246 (1967-03-01), Haenichen
patent: 3341380 (1967-09-01), Mets et al.
patent: 3473975 (1969-10-01), Cullis
patent: 3510735 (1970-05-01), Potter
patent: 3584270 (1971-06-01), Philips
patent: 3739236 (1973-06-01), Loro
patent: 3756873 (1973-09-01), Kaieser
patent: 3836995 (1974-09-01), Wheatley et al.
patent: 3852127 (1974-12-01), Lamming
patent: 3936863 (1976-02-01), Olmstead
patent: 4006046 (1977-02-01), Pravin
patent: 4017882 (1977-04-01), Kannam et al.
patent: 4153904 (1979-05-01), Tasch et al.

Affiliated with

Also associated with

Rating

Semiconductor device having integrated diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having integrated diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having integrated diode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1172216